Samsung 4GB (1x 4GB) DDR2-667 PC2-5300 1.8V DR x4 ECC Fully Buffered 240-pin FB-DIMM RAM Module Signal Processing_Load Reduced CT8G4DFS8266 Capacity 8GB (1x 8GB)

CT8G4DFS8266 Capacity 8GB (1x 8GB) Brand Crucial Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1

2xMTA18ASF2G72HZ-2G3B1 Capacity 32GB (2x 16GB) Brand Micron Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

Why is the speed of this RAM kit shown as 667 MT/s instead of 667 Mhz

2V with a CAS Latency of CL17

M378B5673FH0-CF8 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1

Samsung 4GB (1x 4GB) DDR2-667 PC2-5300 1.8V DR x4 ECC Fully Buffered 240-pin FB-DIMM RAM Module Signal Processing_Load Reduced CT8G4DFS8266 Capacity 8GB (1x 8GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR2 667 MT s 240 pin FB DIMM RAM module from Samsung . This Dual rank, x4 configuration RAM module is for use in DDR2 compatible systems and operates at 667 MT s with an overall transfer rate of PC2 5300. This RAM module also operates at a standard voltage of 1. 8V and is designed