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2xM378T5663EH3-CF7 Capacity 4GB (2x 2GB) Brand Samsung Speed DDR2-800 - 800MT/s - PC2-6400 Voltage 1
HMT42GR7BMR4C-G7D7 Capacity 16GB (1x 16GB) Brand Hynix Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1
M471B5273DH0-CH9 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
x8 configuration RAM kit from Hynix is for use in DDR3 compatible systems and operates at 1600 MT/s with an overall transfer rate of PC3-12800
Why is the speed of this RAM kit shown as 1066 MT/s instead of 1066 Mhz
Samsung 8GB (2x 4GB) DDR2-667 PC2-5300 1.8V DR x4 ECC Fully Buffered 240-pin FB-DIMM RAM Kit Classification_ram-ddr4-2400-sodimm-16gb-1x-dr-fm 2xM378T5663EH3-CF7 Capacity 4GB (2x 2GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (2x 4GB) DDR2 667 MT s 240 pin FB DIMM RAM kit from Samsung . This Dual rank, x4 configuration RAM kit is for use in DDR2 compatible systems and operates at 667 MT s with an overall transfer rate of PC2 5300. This RAM kit also operates at a standard voltage of 1. 8V and is designed to allow
