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Ships within 48 hours · Estimated delivery Aug 22 - Aug 27
5V Technology DDR3L Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Single rank Configuration x4 Pieces in Kit 2 Compatibility
5V Technology DDR3L Error Correction ECC Signal Processing Unbuffered Form Factor 240-pin EUDIMM Ranks Dual rank Configuration 256x8 Pieces in Kit 1 Compatibility
NT2GC64B88B0NS-CG Capacity 2GB (1x 2GB) Brand Nanya Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
MT16JSF25664HY-1G1D1 Capacity 2GB (1x 2GB) Brand Micron Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1
there will be some branded RAM available but Ramcity reserves the right to replace or upgrade to equivalent or better components
Samsung 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.35V SR x8 240-pin UDIMM RAM Module Ranks_Dual 5V Technology DDR3L Error CorrectionProduct Overview This 4GB (1x 4GB) DDR3 1600 MT s Single rank, x8 configuration RAM module from Samsung is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 35V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical
