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Micron 8GB (1x 8GB) CL11 DDR3-1600 PC3-12800 1.5V ECC Registered 240-pin RDIMM RAM Module Classification_ram-ddr3l-1066-sodimm-4gb-1x-fm but the effective rate is

SKU 52600173342
4.5
EUR97.99 EUR121.99

Pay in 4 interest-free payments of $24.50 Learn more

Shipping Estimate
USA
  • USA
  • CAN

Ships within 48 hours · Estimated delivery Aug 23 - Aug 28

Description

but the effective rate is 1600 megatransfers per second (MT/s) because there are 800 million rising edges per second and 800 million falling edges per second of a clock signal running at 800 MHz

HMT351S6BFR8C-H9 Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

This 4GB (2x 2GB) DDR3 1333 MT/s Dual rank RAM kit from Hynix is for use in DDR3 compatible systems and operates at 1333 MT/s with an overall transfer rate of PC3-10600

2xHMA42GR7MFR4N-TF Capacity 32GB (2x 16GB) Brand Hynix Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

M474B5273DH0-YH9 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3L-1333 - 1333MT/s - PC3L-10600 Voltage 1

Micron 8GB (1x 8GB) CL11 DDR3-1600 PC3-12800 1.5V ECC Registered 240-pin RDIMM RAM Module Classification_ram-ddr3l-1066-sodimm-4gb-1x-fm but the effective rate isProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3 1600 MT s 240 pin RDIMM RAM module from Micron . This RAM module is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed

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  • Final sale items are not eligible for returns or exchanges.
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