Samsung 4GB (2x 2GB) DDR3-1333 PC3-10600 1.5V DR 240-pin UDIMM RAM Kit Classification_ram-ddr3l-1600-rdimm-16gb-1x-dr 2xHMA41GR7MFR4N-TF Capacity 16GB (2x 8GB)

2xHMA41GR7MFR4N-TF Capacity 16GB (2x 8GB) Brand Hynix Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

This does not affect your warranty or compatibility

2V Technology DDR4 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Configuration 2048Meg x8 Pieces in Kit 2 Compatibility

but the effective rate is 1333 megatransfers per second (MT/s) because there are 666 million rising edges per second and 666 million falling edges per second of a clock signal running at 666 MHz

MT/s and MHz are used interchangeably

Samsung 4GB (2x 2GB) DDR3-1333 PC3-10600 1.5V DR 240-pin UDIMM RAM Kit Classification_ram-ddr3l-1600-rdimm-16gb-1x-dr 2xHMA41GR7MFR4N-TF Capacity 16GB (2x 8GB)Product Overview This 4GB (2x 2GB) DDR3 1333 MT s Dual rank RAM kit from Samsung is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM kit also operates at a standard voltage of 1. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No. 2xM378B5773DH0 CH9 Capacity 4GB